unisonic technologies co., ltd utt220n03 preliminary power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2011 unisonic technologies co., ltd qw-r502-514.a n-channel enhancement mode power mosfet ? description the utc utt220n03 is a n-channel mosfet, using utc?s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. the utc utt220n03 is generally applied in dc to dc convertor or synchronous rectification ? features * 220a, 30v, r ds(on) =2.0m ? @ v gs =10v, i d = 80a * low gate charge (typical 84nc) * fast switching * 100% avalanche tested * high power and current handling capability * rohs compliant ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing utt220n03l-ta3-t UTT220N03G-TA3-T to-220 g d s tube note: pin assignment: g: gate d: drain s: source
utt220n03 preliminary power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-514.a ver.a ? absolute maximum ratings [t c =25c, unless otherwise noted (note 6)] parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous i d 220 a drain current pulsed (note 1) i dm 876 a single pulsed avalanche energy (note 2) e as 864 mj peak diode recovery dv/dt (note 3) dv/dt 6.0 v/ns t c =25c 214 w power dissipation derate above 25c p d 1.43 w/c junction temperature t j -55~+175 c storage temperature t stg -55~+175 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 0.7 c/w
utt220n03 preliminary power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-514.a ver.a ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v, t c =25c 30 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =250a 30 mv/c drain-source leakage current i dss v ds =32v, v gs =0v 10 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 3.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =80a 2.0 2.4 m ? dynamic parameters input capacitance c iss 5490 7300 pf output capacitance c oss 1220 1620 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 155 233 pf switching parameters total gate charge q g 84 109 nc q gs 19 nc gate to source charge q gs2 9.5 nc gate to drain charge q gd v gs =10v, v ds =24v, i d =80a (note 4, 5) 12 nc turn-on delay time t d(on) 17 44 ns rise time t r 8 26 ns turn-off delay time t d(off) 71 152 ns fall-time t f v dd =15v, i d =80a, r gen =4.7 ? , v gs =10v (note 4, 5) 17 44 ns equivalent series resistance (g-s) esr 1.1 ? source- drain diode ratings and characteristics maximum body-diode continuous current i s 219 a maximum body-diode pulsed current i sm 876 a drain-source diode forward voltage v sd i s =80a, v gs =0v 1.3 v body diode reverse recovery time t rr 54 ns body diode reverse recovery charge q rr i s =80a, v gs =0v, di f /dt=100a/s (note 4) 49 nc notes: 1. repetitive rating: pulse widt h limited by maximum junction temperature 2. l = 3mh, i as = 24a, v dd = 30v, r g = 25 ? , starting t j = 25c 3. i sd 80a, di/dt 200a/s, v dd bv dss , starting t j = 25c 4. pulse test: pulse width 300s, duty cycle 2% 5. essentially independent of operating temperature
utt220n03 preliminary power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-514.a ver.a ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
utt220n03 preliminary power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-514.a ver.a ? test circuits and waveforms(cont.) dut v ds 10v charge q gs q gd q g gate charge test circu it gate charge waveforms v gs v gs 1ma r l 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
utt220n03 preliminary power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-514.a ver.a
utt220n03 preliminary power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-514.a ver.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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